Research Abstract


Observation of the inverse spin Hall effect in silicon

2012年1月17日 Nature Communications 3 : 629 doi: 10.1038/ncomms1640


安藤 和也1 & 齊藤英治1,2,3

  1. 東北大学 金属材料研究所
  2. 科学技術振興機構(JST)戦略的創造研究推進事業(CREST)
  3. 日本原子力研究開発機構 先端基礎研究センター
The spin–orbit interaction in a solid couples the spin of an electron to its momentum. This coupling gives rise to mutual conversion between spin and charge currents: the direct and inverse spin Hall effects. The spin Hall effects have been observed in metals and semiconductors. However, the spin/charge conversion has not been realized in one of the most fundamental semiconductors, silicon, where accessing the spin Hall effects has been believed to be difficult because of its very weak spin–orbit interaction. Here we report observation of the inverse spin Hall effect in silicon at room temperature. The spin/charge current conversion efficiency, the spin Hall angle, is obtained as 0.0001 for a p-type silicon film. In spite of the small spin Hall angle, we found a clear electric voltage due to the inverse spin Hall effect in the p-Si film, demonstrating that silicon can be used as a spin-current detector.