Research Abstract


Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition

2012年3月27日 Scientific Reports 2 : 337 doi: 10.1038/srep00337


宋 海胜1, 黎 松林1, 宮崎 久生1, 佐藤 信太郎1, 林 賢二郎2, 山田 綾香2, 横山 直樹2 & 塚越 一仁1

  1. 独立行政法人物質・材料研究機構国際ナノアーキテクトニクス研究拠点
  2. 産業技術総合研究所 連携研究体グリーン・ナノエレクトロニクスセンター
The reasons for the relatively low transport mobility of graphene grown through chemical vapor deposition (CVD-G), which include point defect, surface contamination, and line defect, were analyzed in the current study. A series of control experiments demonstrated that the determinant factor for the low transport mobility of CVD-G did not arise from point defects or surface contaminations, but stemmed from line defects induced by grain boundaries. Electron microscopies characterized the presence of grain boundaries and indicated the polycrystalline nature of the CVD-G. Field-effect transistors based on CVD-G without the grain boundary obtained a transport mobility comparative to that of Kish graphene, which directly indicated the detrimental effect of grain boundaries. The effect of grain boundary on transport mobility was qualitatively explained using a potential barrier model. Furthermore, the conduction mechanism of CVD-G was also investigated using the temperature dependence measurements. This study can help understand the intrinsic transport features of CVD-G.