A field effect transistor based on multilayers of the compound molybdenum disulfide is reported in this week’s Nature Communications. The devices are simple to fabricate, and display promising electronic and power consumption properties that may be of use in commercial applications.
Molybdenum disulfide has been put forward as a semiconducting alternative to graphene for use in field effect transistors. However, the complex process of fabricating single layers of the material has hindered its compatibility with commercial processes. Debdeep Jena and colleagues overcome this problem by fabricating multilayer molybdenum disulfide transistors. They report significant improvements in the power consumption and electronic properties, suggesting that this material may be of use in practical applications.
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