Nature Hot Topic

Towards atom-thick integrated circuits

This paper reports a new technique for the production of one-atom-thick thin films combining a conductor (graphene) with insulating hexagonal boron nitride (h-BN). The process, called patterned regrowth, allows for the growth of electrically isolated graphene devices in continuous two-dimensional sheets with well-defined heterojunctions ensuring that the patterned domains retain distinct electronic properties. Devices made using this approach are likely to remain mechanically flexible and optically transparent, allowing transfer to a range of substrates for flexible, transparent electronics. The introduction of two-dimensional semiconducting materials into the sheets would combine the three key building blocks (insulator, metal and semiconductor) of modern integrated circuitry.

Nature 488, 7413 table of contents

Top Ten Highlights

Sign up for Nature Research e-alerts to get the lastest research in your inbox every week.

More Hot Topics

PrivacyMark System